RC5041
PRODUCT SPECIFICATION
• Low gate drive voltage, V < 4V
GS
Design Considerations and
Component Selection
• Power package with low thermal resistance
• Drain current rating of 20A minimum
• Drain-Source voltage > 15V.
MOSFET Selection
This application requires N-channel Logic Level Enhance-
ment Mode Field Effect Transistors. Desired characteristics
are as follows:
The on-resistance (R
) is the primary parameter for
DS(ON)
MOSFET selection. The on-resistance determines the power
dissipation of the MOSFET and therefore significantly
affects the efficiency of the DC-DC Converter. Table 3
provides a list of suitable MOSFETs for this application.
• Low Static Drain-Source On-Resistance,
R
< 20 mΩ (lower is better)
DS(on)
Table 3. MOSFET Selection Table
Manufacturer & Model #
R
(mΩ)
Max.
25
38
37
56
9
DS,ON
Thermal
P ackage Resistance
Conditions1
= 4.5V, T = 25°C
Typ.
16
Megamos
MiP30N03A
V
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
SO-8
Φ
Φ
Φ
Φ
Φ
Φ
Φ
Φ
= 62
= 75
= 62
= 62
= 62
= 62
= 83
= 83
= 125
= 125
= 125
= 40
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
J
JA
JA
JA
JA
JA
JA
JA
JA
I = 6A
D
T = 125°C
J
—
Fuji
2SK1388
V
I
= 4V,
= 20A
T = 25°C
J
25
D
T = 125°C
J
37
Int. Rectifier
IRL3803
V
I
= 4.5V,
= 59A
T = 25°C
J
6.1
D
T = 125°C
J
14
10
16
19
29
15
24
33
50
15
23
17
26
20
30
18
27
19
29
Int. Rectifier
IRL2203
V
I
= 4.5V,
= 50A
T = 25°C
J
8.2
—
D
T = 125°C
J
Int. Rectifier
IRL3103
V
I
= 4.5V,
= 28A
T = 25°C
J
16
—
D
T = 125°C
J
NS
NDP706A
V
I
= 5.0V,
= 40A
T = 25°C
J
13
20
22
—
D
T = 125°C
J
NEC
2SK2941
V
I
= 4.0V,
= 18A
T = 25°C
J
D
T = 125°C
J
NEC
2SK2984
V
I
= 4.0V,
= 20A
T = 25°C
J
10.5
—
D
T = 125°C
J
NEC
µPA1703
V
I
= 4.0V,
= 5A
T = 25°C
J
12
—
Φ
JA
D
T = 125°C
J
Int. Rectifier
IRF7413A
V
I
= 4.5V,
= 3.3A
T = 25°C
J
—
SO-8
Φ
Φ
JA
JA
D
T = 125°C
J
—
Int. Rectifier
IRF7413
V
I
= 4.5V,
= 3.7A
T = 25°C
J
—
SO-8
D
T = 125°C
J
—
Int. Rectifier
IRL3103A
V
= 4.5V,
= 28A
T = 25°C
J
—
D2 PAK
Φ
JA
I
D
T = 125°C
J
—
Note:
1. R
) values at T =125°C for most devices were extrapolated from the typical operating curves supplied by the
DS(ON
J
manufacturers and are approximations only. Only National Semiconductor offers maximum values at T = 125°C.
J
8
RAYTHEON [ RAYTHEON COMPANY ]
