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HYS72T64000HU-3-B 参数 Datasheet PDF下载

HYS72T64000HU-3-B图片预览
型号: HYS72T64000HU-3-B
PDF下载: 下载PDF文件 查看货源
内容描述: 240针无缓冲DDR2 SDRAM模组 [240-Pin unbuffered DDR2 SDRAM Modules]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 87 页 / 5113 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS[64/72]T[32/64/128]xx0HU-[25F/2.5/3/3S/3.7/5]-B  
Unbuffered DDR2 SDRAM Module  
Parameter  
Symbol  
DDR2–800  
Min.  
Unit  
Note  
1)2)3)4)5)6)7)8)  
Max.  
DQ and DM input pulse width for each input  
DQS output access time from CK / CK  
DQS input high pulse width  
tDIPW  
0.35  
–350  
0.35  
0.35  
tCK.AVG  
ps  
9)  
tDQSCK  
tDQSH  
tDQSL  
+350  
tCK.AVG  
tCK.AVG  
ps  
DQS input low pulse width  
16)  
17)  
DQS-DQ skew for DQS & associated DQ signals tDQSQ  
200  
+ 0.25  
DQS latching rising transition to associated clock tDQSS  
– 0.25  
tCK.AVG  
edges  
18)19)20)  
17)  
DQ and DM input setup time  
DQS falling edge hold time from CK  
DQS falling edge to CK setup time  
CK half pulse width  
tDS.BASE  
50  
––  
__  
ps  
tDSH  
tDSS  
tHP  
0.2  
0.2  
tCK.AVG  
tCK.AVG  
ps  
17)  
21)  
Min(tCH.ABS  
,
tCL.ABS  
)
9)22)  
Data-out high-impedance time from CK / CK  
Address and control input hold time  
tHZ  
tAC.MAX  
ps  
23)25)  
tIH.BASE  
250  
0.6  
ps  
Control & address input pulse width for each input tIPW  
tCK.AVG  
ps  
24)25)  
9)22)  
9)22)  
31)  
Address and control input setup time  
DQ low impedance time from CK/CK  
DQS/DQS low-impedance time from CK / CK  
MRS command to ODT update delay  
Mode register set command cycle time  
OCD drive mode output delay  
DQ/DQS output hold time from DQS  
DQ hold skew factor  
tIS.BASE  
175  
tLZ.DQ  
tLZ.DQS  
tMOD  
tMRD  
tOIT  
2 x tAC.MIN  
tAC.MAX  
tAC.MAX  
12  
ps  
tAC.MIN  
ps  
0
2
0
ns  
nCK  
ns  
31)  
12  
26)  
tQH  
t
HP tQHS  
ps  
27)  
tQHS  
300  
1.1  
0.6  
ps  
28)29)  
28)30)  
31)  
Read preamble  
tRPRE  
tRPST  
tRTP  
0.9  
0.4  
7.5  
0.35  
0.4  
15  
tCK.AVG  
tCK.AVG  
ns  
Read postamble  
Internal Read to Precharge command delay  
Write preamble  
tWPRE  
tWPST  
tWR  
tCK.AVG  
tCK.AVG  
ns  
Write postamble  
0.6  
31)  
Write recovery time  
31)32)  
Internal write to read command delay  
Exit power down to read command  
tWTR  
tXARD  
7.5  
2
ns  
nCK  
nCK  
Exit active power-down mode to read command tXARDS  
8 – AL  
(slow exit, lower power)  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
tXP  
2
nCK  
31)  
Exit self-refresh to a non-read command  
Exit self-refresh to read command  
tXSNR  
tXSRD  
t
RFC +10  
ns  
200  
nCK  
nCK  
Write command to DQS associated clock edges WL  
RL – 1  
1) For details and notes see the relevant Qimonda component data sheet  
2)  
V
DDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)  
Rev. 1.3, 2006-12  
21  
03292006-6GMD-RSFT  
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