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HYS72T64000HU-3-B 参数 Datasheet PDF下载

HYS72T64000HU-3-B图片预览
型号: HYS72T64000HU-3-B
PDF下载: 下载PDF文件 查看货源
内容描述: 240针无缓冲DDR2 SDRAM模组 [240-Pin unbuffered DDR2 SDRAM Modules]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 87 页 / 5113 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS[64/72]T[32/64/128]xx0HU-[25F/2.5/3/3S/3.7/5]-B  
Unbuffered DDR2 SDRAM Module  
Speed Grade  
DDR2–667C  
–3  
DDR2–667D  
–3S  
Unit  
Note  
QAG Sort Name  
CAS-RCD-RP latencies  
Parameter  
4–4–4  
5–5–5  
tCK  
Symbol  
Min.  
Max.  
Min.  
Max.  
1)2)3)4)5)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
Row Active Time  
Row Cycle Time  
RAS-CAS-Delay  
Row Precharge Time  
tRAS  
tRC  
tRCD  
tRP  
45  
57  
12  
12  
70000  
45  
60  
15  
15  
70000  
ns  
ns  
ns  
ns  
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal  
OCD drive strength (EMRS(1) A1 = 0) .  
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode  
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
4) The output timing reference voltage level is VTT  
.
5) RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI  
t
.
TABLE 14  
Speed Grade Definition Speed Bins for DDR2–533C  
Speed Grade  
DDR2–533C  
Unit  
Note  
QAG Sort Name  
CAS-RCD-RP latencies  
–3.7  
4–4–4  
tCK  
Parameter  
Symbol  
Min.  
Max.  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)5)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
Clock Frequency  
@ CL = 3  
@ CL = 4  
@ CL = 5  
tCK  
5
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
3.75  
3.75  
45  
8
tCK  
8
Row Active Time  
Row Cycle Time  
RAS-CAS-Delay  
Row Precharge Time  
tRAS  
tRC  
tRCD  
tRP  
70000  
60  
15  
15  
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.Timings are further guaranteed for normal  
OCD drive strength (EMRS(1) A1 = 0)  
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
4) The output timing reference voltage level is VTT  
.
5) RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI  
t
.
Rev. 1.3, 2006-12  
19  
03292006-6GMD-RSFT  
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