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HYS72T64000HU-3-B 参数 Datasheet PDF下载

HYS72T64000HU-3-B图片预览
型号: HYS72T64000HU-3-B
PDF下载: 下载PDF文件 查看货源
内容描述: 240针无缓冲DDR2 SDRAM模组 [240-Pin unbuffered DDR2 SDRAM Modules]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 87 页 / 5113 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS[64/72]T[32/64/128]xx0HU-[25F/2.5/3/3S/3.7/5]-B  
Unbuffered DDR2 SDRAM Module  
Parameter  
Symbol  
DDR2–667  
Min.  
Unit  
Note  
1)2)3)4)5)6)7)8)  
Max.  
18)19)20)  
17)  
DQ and DM input setup time  
DQS falling edge hold time from CK  
DQS falling edge to CK setup time  
CK half pulse width  
tDS.BASE  
tDSH  
100  
0.2  
0.2  
ps  
tCK.AVG  
tCK.AVG  
ps  
17)  
tDSS  
21)  
tHP  
Min(tCH.ABS,  
tCL.ABS  
)
9)22)  
Data-out high-impedance time from CK / CK  
Address and control input hold time  
tHZ  
tAC.MAX  
ps  
25)23)  
tIH.BASE  
275  
0.6  
ps  
Control & address input pulse width for each input tIPW  
tCK.AVG  
ps  
24)25)  
9)22)  
9)22)  
31)  
Address and control input setup time  
DQ low impedance time from CK/CK  
DQS/DQS low-impedance time from CK / CK  
MRS command to ODT update delay  
Mode register set command cycle time  
OCD drive mode output delay  
DQ/DQS output hold time from DQS  
DQ hold skew factor  
tIS.BASE  
200  
tLZ.DQ  
tLZ.DQS  
tMOD  
tMRD  
tOIT  
2 x tAC.MIN  
tAC.MAX  
tAC.MAX  
12  
ps  
tAC.MIN  
ps  
0
2
0
ns  
nCK  
ns  
31)  
12  
26)  
tQH  
t
HP tQHS  
ps  
27)  
tQHS  
340  
1.1  
0.6  
ps  
28)29)  
28)30)  
31)  
Read preamble  
tRPRE  
tRPST  
tRTP  
0.9  
0.4  
7.5  
0.35  
0.4  
15  
tCK.AVG  
tCK.AVG  
ns  
Read postamble  
Internal Read to Precharge command delay  
Write preamble  
tWPRE  
tWPST  
tWR  
tCK.AVG  
tCK.AVG  
ns  
Write postamble  
0.6  
31)  
Write recovery time  
31)32)  
Internal write to read command delay  
Exit power down to read command  
tWTR  
tXARD  
7.5  
2
ns  
nCK  
nCK  
Exit active power-down mode to read command tXARDS  
7 – AL  
(slow exit, lower power)  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
tXP  
2
nCK  
31)  
Exit self-refresh to a non-read command  
Exit self-refresh to read command  
tXSNR  
tXSRD  
t
RFC +10  
ns  
200  
nCK  
nCK  
Write command to DQS associated clock edges WL  
RL–1  
1) For details and notes see the relevant Qimonda component data sheet  
2)  
V
DDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)  
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
7) The output timing reference voltage level is VTT  
.
Rev. 1.3, 2006-12  
24  
03292006-6GMD-RSFT  
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