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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
2.4.8.1  
AUTO PRECHARGE  
Auto Precharge is a feature which performs the same individual-bank precharge functions described above, but without  
requiring an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction with a specific  
READ or WRITE command. A precharge of the bank/row that is addressed with the READ or WRITE command is automatically  
performed upon completion of the READ or WRITE burst. Auto Precharge is non persistent in that it is either enabled or  
disabled for each individual READ or WRITE command.  
Auto Precharge ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue another  
command to the same bank until the precharge (tRP) is completed. This is determined as if an explicit PRECHARGE command  
was issued at the earliest possible time, as described for each burst type.  
2.4.9  
AUTO REFRESH and SELF REFRESH  
The DDR Mobile-RAM requires a refresh of all rows in an rolling 64ms interval. Each refresh is generated in one of two ways:  
by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode. Dividing the number of  
rows into the rolling 64ms interval defines the average refresh interval, tREFI, which is a guideline to controllers for distributed  
refresh timing.  
2.4.9.1  
AUTO REFRESH  
Auto Refresh is used during normal operation of the DDR  
Mobile-RAM. The command is non persistent, so it must be  
issued each time a refresh is required. A minimum time tRFC  
is required between two AUTO REFRESH commands. The  
same rule applies to any access command after the Auto  
Refresh operation. All banks must be precharged prior to the  
AUTO REFRESH command.The refresh addressing is  
generated by the internal refresh controller. This makes the  
address bits “Don’t Care” during an AUTO REFRESH  
command. The DDR Mobile-RAM requires Auto Refresh  
cycles at an average periodic interval of tREFI (max.).Partial  
array mode has no influence on Auto Refresh mode.  
FIGURE 33  
AUTO REFRESH Command  
CK  
CK  
CKE  
(High)  
CS  
RAS  
CAS  
WE  
To allow for improved efficiency in scheduling and switching  
between tasks, some flexibility in the absolute refresh interval  
is provided.  
A maximum of eight AUTO REFRESH  
commands can be posted to the DDR Mobile-RAM, and the  
maximum absolute interval between any AUTO REFRESH  
command and the next AUTO REFRESH command is 8 *  
A0-A12  
BA0,BA1  
tREFI  
.
= Don't Care  
Rev.1.0, 2007-03  
42  
10242006-Y557-TZXW  
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