Internet Data Sheet
HYB25D512[40/16/80]0B[E/F/C/T](L)
Double-Data-Rate SDRAM
TABLE 16
Electrical Characteristics and DC Operating Conditions
Parameter
Symbol
Values
Unit Note/Test Condition 1)
Min.
Typ.
Max.
Device Supply Voltage
Device Supply Voltage
Output Supply Voltage
Output Supply Voltage
EEPROM supply voltage
VDD
2.3
2.5
2.3
2.5
2.3
0
2.5
2.6
2.5
2.6
2.5
2.7
2.7
2.7
2.7
3.6
0
V
V
V
V
V
V
fCK ≤ 166 MHz
CK > 166 MHz 2)
fCK ≤ 166 MHz 3)
CK > 166 MHz 2)3)
VDD
f
VDDQ
VDDQ
VDDSPD
f
—
—
Supply Voltage, I/O Supply
Voltage
VSS,
VSSQ
4)
5)
Input Reference Voltage
VREF
VTT
0.49 × VDDQ 0.5 × VDDQ 0.51 × VDDQ
V
V
I/O Termination Voltage
(System)
V
REF – 0.04
V
REF + 0.04
6)
6)
6)
Input High (Logic1) Voltage VIH(DC)
V
REF + 0.15
V
V
V
DDQ + 0.3
REF – 0.15
DDQ + 0.3
V
V
V
Input Low (Logic0) Voltage
VIL(DC)
VIN(DC)
–0.3
–0.3
Input Voltage Level,
CK and CK Inputs
6)7)
8)
Input Differential Voltage,
CK and CK Inputs
VID(DC)
0.36
0.71
–2
V
DDQ + 0.6
V
VI-Matching Pull-up Current VIRatio
to Pull-down Current
1.4
2
—
μA
Input Leakage Current
II
Any input 0 V ≤ VIN ≤ VDD;
All other pins not under test
= 0 V 9)
Output Leakage Current
IOZ
–5
5
μA
DQs are disabled;
0 V ≤ VOUT ≤ VDDQ
9)
Output High Current, Normal IOH
Strength Driver
—
–16.2
—
mA VOUT
=
1.95 V
Output Low Current, Normal IOL
16.2
mA OUT = 0.35 V
V
Strength Driver
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V; VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V (DDR400);
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Under all conditions, VDDQ must be less than or equal to VDD
4) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC). VREF is also expected to track noise variations in VDDQ
5) TT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and
must track variations in the DC level of VREF
6) Inputs are not recognized as valid until VREF stabilizes.
7) ID is the magnitude of the difference between the input level on CK and the input level on CK.
.
.
V
.
V
8) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and
voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between
pull-up and pull-down drivers due to process variation.
9) Values are shown per pin.
Rev. 1.70, 2007-11
24
03062006-PFFJ-YJY2
QIMONDA [ QIMONDA AG ]
