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HYB25D512160BE-5 参数 Datasheet PDF下载

HYB25D512160BE-5图片预览
型号: HYB25D512160BE-5
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.5ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 37 页 / 1337 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25D512[40/16/80]0B[E/F/C/T](L)  
Double-Data-Rate SDRAM  
4
Electrical Characteristics  
4.1  
Operating Conditions  
TABLE 14  
Absolute Maximum Ratings  
Parameter  
Symbol  
Values  
typ.  
Unit Note/ Test  
Condition  
max.  
min.  
Voltage on I/O pins relative to VSS  
VIN, VOUT  
–0.5  
VDDQ  
+
V
0.5  
Voltage on inputs relative to VSS  
Voltage on VDD supply relative to VSS  
Voltage on VDDQ supply relative to VSS  
Operating temperature (ambient)  
Storage temperature (plastic)  
VIN  
–1  
–1  
–1  
0
+3.6  
+3.6  
+3.6  
+70  
+150  
V
VDD  
VDDQ  
TA  
V
V
°C  
°C  
W
mA  
TSTG  
PD  
-55  
Power dissipation (per SDRAM component)  
Short circuit output current  
1
IOUT  
50  
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings  
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated  
circuit.  
Rev. 1.70, 2007-11  
22  
03062006-PFFJ-YJY2  
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