欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYB25D512160BE-5 参数 Datasheet PDF下载

HYB25D512160BE-5图片预览
型号: HYB25D512160BE-5
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.5ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 37 页 / 1337 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB25D512160BE-5的Datasheet PDF文件第24页浏览型号HYB25D512160BE-5的Datasheet PDF文件第25页浏览型号HYB25D512160BE-5的Datasheet PDF文件第26页浏览型号HYB25D512160BE-5的Datasheet PDF文件第27页浏览型号HYB25D512160BE-5的Datasheet PDF文件第29页浏览型号HYB25D512160BE-5的Datasheet PDF文件第30页浏览型号HYB25D512160BE-5的Datasheet PDF文件第31页浏览型号HYB25D512160BE-5的Datasheet PDF文件第32页  
Internet Data Sheet  
HYB25D512[40/16/80]0B[E/F/C/T](L)  
Double-Data-Rate SDRAM  
7)  
t
HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific  
voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).  
8) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured  
between VIH(ac) and VIL(ac)  
.
9) These parameters guarantee device timing, but they are not necessarily tested on each device.  
10) The specific requirement is that DQS be valid (HIGH,LOW, or some point on a valid transition) on or before this CK edge. A valid transition  
is defined as monotonic and meeting the input slew rate specificationsof the device. When no writes were previously in progress on the  
bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW at this time, depending  
on tDQSS  
.
11) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system  
performance (bus turnaround) degrades accordingly.  
12)  
TABLE 18  
AC Timing - Absolute Specifications  
Parameter  
Symbol  
–7  
DDR266A  
Unit  
Note/Test  
Condition1)  
Min.  
Max.  
2)3)4)5)  
2)3)4)5)  
DQ output access time from CK/CK  
CK high-level width  
tAC  
tCH  
tCK  
–0.75  
+0.75  
0.55  
12  
ns  
tCK  
ns  
ns  
ns  
tCK  
tCK  
ns  
ns  
ns  
tCK  
ns  
tCK  
ns  
tCK  
tCK  
ns  
ns  
ns  
0.45  
Clock cycle time  
7.5  
CL = 3.02)3)4)5)  
CL = 2.52)3)4)5)  
CL = 2.02)3)4)5)  
7.5  
12  
7.5  
12  
2)3)4)5)  
CK low-level width  
tCL  
0.45  
0.55  
2)3)4)5)6)  
2)3)4)5)  
Auto precharge write recovery + precharge time  
DQ and DM input hold time  
tDAL  
(tWR/tCK)+(tRP/tCK)  
tDH  
0.5  
2)3)4)5)6)  
2)3)4)5)  
DQ and DM input pulse width (each input)  
DQS output access time from CK/CK  
DQS input low (high) pulse width (write cycle)  
tDIPW  
tDQSCK  
tDQSL,H  
1.75  
–0.75  
0.35  
+0.75  
2)3)4)5)  
DQS-DQ skew (DQS and associated DQ signals) tDQSQ  
Write command to 1st DQS latching transition  
+0.5  
1.25  
TSOPII 2)3)4)5)  
2)3)4)5)  
tDQSS  
tDS  
0.75  
0.5  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)7)  
DQ and DM input setup time  
DQS falling edge hold time from CK (write cycle) tDSH  
0.2  
DQS falling edge to CK setup time (write cycle)  
Clock Half Period  
tDSS  
tHP  
tHZ  
tIH  
0.2  
min. (tCL, tCH  
–0.75  
)
Data-out high-impedance time from CK/CK  
Address and control input hold time  
+0.75  
0.9  
fast slew rate  
3)4)5)6)8)  
1.0  
ns  
slow slew rate  
3)4)5)6)8)  
2)3)4)5)9)  
Control and Addr. input pulse width (each input)  
Address and control input setup time  
tIPW  
tIS  
2.2  
0.9  
ns  
ns  
fast slew rate  
3)4)5)6)8)  
1.0  
ns  
slow slew rate  
3)4)5)6)8)  
Rev. 1.70, 2007-11  
28  
03062006-PFFJ-YJY2  
 复制成功!