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HYB25D256400BTL-6 参数 Datasheet PDF下载

HYB25D256400BTL-6图片预览
型号: HYB25D256400BTL-6
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Electrical Characteristics  
Table 22  
IDD Conditions  
Parameter  
Symbol  
Operating Current: one bank; active/ precharge; tRC = tRCMIN; tCK = tCKMIN  
;
IDD0  
DQ, DM, and DQS inputs changing once per clock cycle; address and control inputs changing once  
every two clock cycles.  
Operating Current: one bank; active/read/precharge; Burst = 4;  
IDD1  
Refer to the following page for detailed test conditions.  
Precharge Power-Down Standby Current: all banks idle; power-down mode; CKE VILMAX; tCK  
tCKMIN  
=
IDD2P  
IDD2F  
Precharge Floating Standby Current: CS VIHMIN, all banks idle;  
CKE VIHMIN; tCK = tCKMIN, address and other control inputs changing once per clock cycle, VIN = VREF  
for DQ, DQS and DM.  
Precharge Quiet Standby Current:  
IDD2Q  
CS VIHMIN, all banks idle; CKE VIHMIN; tCK = tCKMIN, address and other control inputs stable  
at VIHMIN or VILMAX; VIN = VREF for DQ, DQS and DM.  
Active Power-Down Standby Current: one bank active; power-down mode;  
CKE VILMAX; tCK = tCKMIN; VIN = VREF for DQ, DQS and DM.  
IDD3P  
Active Standby Current: one bank active; CS VIHMIN; CKE VIHMIN; tRC = tRASMAX; tCK = tCKMIN; DQ, IDD3N  
DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock  
cycle.  
Operating Current: one bank active; Burst = 2; reads; continuous burst; address and control inputs IDD4R  
changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200  
and DDR266A, CL = 3 for DDR333; tCK = tCKMIN; IOUT = 0 mA  
Operating Current: one bank active; Burst = 2; writes; continuous burst; address and control inputs IDD4W  
changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200  
and DDR266A, CL = 3 for DDR333; tCK = tCKMIN  
Auto-Refresh Current: tRC = tRFCMIN, burst refresh  
IDD5  
IDD6  
IDD7  
Self-Refresh Current: CKE 0.2 V; external clock on; tCK = tCKMIN  
Operating Current: four bank; four bank interleaving with BL = 4; Refer to the following page for  
detailed test conditions.  
Data Sheet  
66  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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