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HYB25D256400BTL-6 参数 Datasheet PDF下载

HYB25D256400BTL-6图片预览
型号: HYB25D256400BTL-6
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Timing Diagrams  
5
Timing Diagrams  
tDQSL  
tDQSH  
DQS  
DQ  
tDH  
tDS  
DI n  
tDH  
tDS  
DM  
DI n = Data In for column n.  
3 subsequent elements of data in are applied in programmed order following DI n.  
Don’t Care  
Figure 38 Data Input (Write), Timing Burst Length = 4  
DQS  
tDQSQ max  
tQH  
DQ  
tQH (Data output hold time from DQS)  
t
DQSQ and tQH are only shown once and are shown referenced to different edges of DQS, only for clarify of illustration.  
.
tDQSQ and tQH both apply to each of the four relevant edges of DQS.  
t
DQSQ max. is used to determine the worst case setup time for controller data capture.  
tQH is used to determine the worst case hold time for controller data capture.  
Figure 39 Data Output (Read), Timing Burst Length = 4  
Data Sheet  
69  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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