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HYB18H512321AFL20 参数 Datasheet PDF下载

HYB18H512321AFL20图片预览
型号: HYB18H512321AFL20
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Package  
6.2  
Package Thermal Characteristics  
Table 40  
PG-TFBGA 136 Package Thermal Resistances  
Theta_jA  
Theta_jB Theta_jC  
JEDEC Board  
Air Flow  
K/W  
1s0p  
0 m/s  
40  
2s0p  
0 m/s  
22  
1 m/s  
32  
3 m/s  
27  
1 m/s  
19  
3 m/s  
17  
-
5
-
2
1. Theta_jA : Junction to Ambient thermal resistance. The values have been obtained by simulation using the  
conditions stated in the JEDEC JESD-51 standard.  
2. Theta_jB : Junction to Board thermal resistance. The value has been obtained by simulation.  
3. Theta_jC : Junction to Case thermal resistance. The value has been obtained by simulation.  
Data Sheet  
99  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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