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HYB18H512321AFL20 参数 Datasheet PDF下载

HYB18H512321AFL20图片预览
型号: HYB18H512321AFL20
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Functional Description  
4.2.2  
Self Calibration for Driver and Termination  
The ouput impedance is updated during all AREF commands. These updates are used to compensate for  
variations in supply voltage and temperature. Impedance updates do not affect device operation. No activity on  
the Address, command and data bus is allowed during a minimum Keep Out time tKO after the Autorefresh  
command has been issued.  
CLK#  
CLK  
Com.  
Add.  
DQ  
ARF  
NOP  
ARF: Autorefresh  
Don't Care  
tKO  
Keep Out time  
Figure 12 Termination update Keep Out time after Autorefresh command  
To guarantee optimum driver impedance after power-up, the needs 700 cycles after the clock is applied and  
stable to calibrate the impedance upon power-up. The user can operate the part with fewer than 700 cycles, but  
optimal output impedance will not be guaranteed.  
The GDDR3 Graphics RAM proceeds in the following manner for Self Calibration:  
The PMOS device is calibrated against the external ZQ resistor value. First one PMOS leg is calibrated against  
ZQ. The number of legs used for the terminators ( DQ and ADD/CMD) and the PMOS driver is represented in  
Table 16. Next, one NMOS leg is calibrated against the already calibrated PMOS leg. The NMOS driver uses 6  
NMOS legs.  
Data Sheet  
34  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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