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HYB18H512321AFL20 参数 Datasheet PDF下载

HYB18H512321AFL20图片预览
型号: HYB18H512321AFL20
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Functional Description  
Table 16  
Number of Legs used for Terminator and Driver Self Calibration  
Termination  
Number of Legs Notes  
CKE (at RES)  
Terminator  
ADD / CMD  
DQ  
0
1
ZQ/2  
ZQ  
2
1
EMRS[3:2]  
1)  
00  
10  
11  
Disabled  
ZQ/4  
ZQ/2  
0
4
2
Driver  
PMOS  
NMOS  
ZQ/6  
ZQ/6  
6
6
1) EMRS[3:2] = 00 disables the ADD and CMD terminations as well.  
Figure 13 represents a simplified schematic of the calibration circuits. First, the strength control bits are adjusted  
in such a way that the VDDQ voltage is divided equaly between the PMOS device and the ZQ resistor. The best  
bit pattern will cause the comparator to switch the PMOS Match signal output value. In a second step, the NFET  
is calibrated against the already calibrated PFET. In the same manner, the best control bit combination will cause  
the comparator to switch the NMOS Match signal output value.  
VDDQ  
VDDQ  
NMOS  
Calibration  
Strength  
VSSQ  
Control [2:0]  
PMOS  
Calibration  
Match  
VDDQ / 2  
Strength  
Control [2:0]  
ZQ  
Match  
VDDQ / 2  
VSSQ  
VSSQ  
Figure 13 Self Calibration of PMOS and NMOS Legs  
Data Sheet  
35  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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