Philips Semiconductors
Preliminary specification
Fault-tolerant CAN transceiver
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); note 1.
SYMBOL
V
CC
V
BAT
V
n
V
CANH
V
CANL
V
trt(n)
V
WAKE
I
WAKE
V
INH
V
RTH
V
RTL
R
RTH
R
RTL
T
vj
T
stg
V
esd
PARAMETER
supply voltage on pin V
CC
battery voltage on pin BAT
DC voltage on pins 2 to 6
DC voltage on pin CANH
DC voltage on pin CANL
transient voltage on
pins CANH and CANL
DC input voltage on pin WAKE
DC input current on pin WAKE
DC output voltage on pin INH
DC voltage on pin RTH
DC voltage on pin RTL
termination resistance on pin RTH
termination resistance on pin RTL
virtual junction temperature
storage temperature
electrostatic discharge voltage
human body model; note 3
machine model; note 4
Notes
1. All voltages are defined with respect to pin GND. Positive current flows into the IC.
note 2
see Fig.6
CONDITIONS
MIN.
−0.3
−0.3
−0.3
−40
−40
−150
−
−15
−0.3
−0.3
−0.3
500
500
−40
−55
−2.0
−200
+6
+40
TJA1054
MAX.
UNIT
V
V
V
V
V
V
V
mA
V
V
V
Ω
Ω
°C
°C
kV
V
V
CC
+ 0.3
+40
+40
+100
V
BAT
+ 0.3
−
V
BAT
+ 0.3
V
BAT
+ 1.2
V
BAT
+ 1.2
16000
16000
+150
+150
+2.0
+200
2. Junction temperature in accordance with
“IEC 747-1”.
An alternative definition is: T
vj
= T
amb
+ P
×
R
th(vj-a)
where
R
th(vj-a)
is a fixed value to be used for the calculation of T
vj
. The rating for T
vj
limits the allowable combinations of
power dissipation (P) and operating ambient temperature (T
amb
).
3. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor.
4. Equivalent to discharging a 200 pF capacitor through a 10
Ω
resistor and a 0.75
µH
coil.
THERMAL CHARACTERISTICS
SYMBOL
R
th(vj-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
120
UNIT
K/W
QUALITY SPECIFICATION
Quality specification in accordance with
“SNW-FQ-611-Part-E”.
1999 Feb 11
9
PHILIPS [ NXP SEMICONDUCTORS ]
