Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
TDA8512J
14.7 Typical performance characteristics
MGW431
MGW432
4
10
120
V
handbook, halfpage
handbook, halfpage
o
I
q
(mV)
(mA)
3
10
100
2
10
80
60
40
20
0
10
1
(1)
(2)
−1
10
−2
10
−3
10
0
2
4
6
8
10
7
9
11
13
15
17
(V)
19
V
(V)
MODE
V
P
(1) BTL mode.
(2) SE mode.
Fig.9 Quiescent current as a function of supply
voltage; measured without load.
Fig.10 Output voltage as a function of mode select
voltage.
MGW434
MGW433
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(1)
−1
−1
10
10
(2)
(3)
(2)
(3)
−2
−2
10
10
−2
−1
2
−2
−1
2
10
10
1
10
10
10
10
1
10
10
P
(W)
P
(W)
o
o
SE mode.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
SE mode.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
(1) fi = 10 kHz.
(1) fi = 10 kHz.
Fig.11 THD as a function of output power at
Fig.12 THD as a function of output power at
RL = 2 Ω.
RL = 4 Ω.
2001 Nov 16
15
NXP [ NXP ]
