Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
TDA8512J
MGW446
(1)
MGW445
12
10
handbook, halfpage
handbook, halfpage
P
d
P
d
(W)
10
(W)
8
8
6
4
2
6
(1)
(2)
4
(2)
2
0
0
5
10
15
20
0
4
8
12
16
V
(V)
Po (W)
P
SE mode.
SE mode.
(1) RL = 2 Ω.
(2) RL = 4 Ω.
(1) RL = 2 Ω.
(2) RL = 4 Ω.
Fig.17 Power dissipation as a function of output
power at VP = 15 V.
Fig.18 Power dissipation as a function of supply
voltage.
MGW448
MGW447
4
4
handbook, halfpage
handbook, halfpage
B
P
B
P
(dB)
(dB)
2
2
0
−2
−4
0
−2
−4
−2
−1
2
−2
−1
2
10
10
1
10
10
10
10
1
10
10
f (kHz)
f (kHz)
i
i
SE mode.
VP = 15 V; RL = 2 Ω.
Po = 8.5 W; THD = 0.5%.
BTL mode.
VP = 15 V; RL = 4 Ω.
Po = 17 W; THD = 0.5%.
Fig.19 Power bandwidth as a function of
frequency; no bandpass applied.
Fig.20 Power bandwidth as a function of
frequency; no bandpass applied.
2001 Nov 16
17
NXP [ NXP ]
