Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
TDA8512J
MGW438
MGW437
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
−1
−1
10
10
(2)
(3)
−2
−2
10
10
−2
−1
2
−2
−1
2
10
10
1
10
10
10
10
1
10
10
P
(W)
f (kHz)
i
o
BTL mode.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
BTL mode.
(1) fi = 10 kHz.
Po = 1 W; RL = 4 Ω.
Fig.21 THD as a function of output power at
Fig.22 THD as a function of frequency; no
bandpass applied.
RL = 4 Ω.
MGW440
MGW439
0
40
handbook, halfpage
handbook, halfpage
(1)
P
o
(W)
SVRR
(dB)
−20
−40
30
(2)
(3)
(4)
20
10
−60
(1)
(2)
0
5
−80
10
−2
−1
2
10
15
20
10
1
10
10
V
(V)
f (kHz)
P
i
BTL mode.
(1) Operating.
(2) Mute.
BTL mode.
(3) RL = 8 Ω; THD = 10%.
(4) RL = 8 Ω; THD = 0.5%.
(1) RL = 4 Ω; THD = 10%.
(2) RL = 4 Ω; THD = 0.5%.
Fig.23 SVRR as a function of frequency at
VREF = 1 V; no bandpass applied.
Fig.24 Output power as a function of supply
voltage.
2001 Nov 16
18
NXP [ NXP ]
