Philips Semiconductors
Preliminary specification
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
TDA8512J
V
handbook, full pagewidth
P
2200
µF
100
nF
V
5
V
MODE
14
P1
P2
13
TDA8512J
(1)
1 kΩ
INV1
1
input 1
6
8
OUT1
OUT2
220
nF
(2)
C
out
60
kΩ
R
L
(1)
1 kΩ
INV2
3
2
input 2
(2)
C
out
220
nF
60
kΩ
R
SGND
L
reference
voltage
REF
9
INV3
15
60
kΩ
10
OUT3
(1)
(1)
1 kΩ
1 kΩ
16
INV3
input 3
input 4
(2)
C
C
out
220
nF
R
L
60
kΩ
12 OUT4
17
4
INV4
RR
(2)
out
220
nF
supply voltage
ripple rejection
R
L
1/2V
P
7
11
100
µF
GND1 GND2
MGW429
(1) Advised when driven with hard clipping input signals.
(2) For frequencies down to 20 Hz:
Cout = 4700 µF at RL = 2 Ω.
Cout = 2200 µF at RL = 4 Ω.
Fig.6 Application diagram for four SE amplifiers.
12
2001 Nov 16
NXP [ NXP ]
