IRFZ48N 参数 Datasheet PDF下载

Philips Semiconductors

Product specification

N-channel enhancement mode

TrenchMOS

TM

transistor

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

IRFZ48N

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

max

1 2 3

(2x)

2,54 2,54

0,9 max (3x)

0,6

2,4

Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

February 1999

7

Rev 1.000