Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
(BR)GSS
R
DS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
DS
= 55 V; V
GS
= 0 V;
V
GS
=
±10
V; V
DS
= 0 V
I
G
=
±1
mA;
V
GS
= 10 V; I
D
= 25 A
T
j
= 175˚C
T
j
= 175˚C
T
j
= 175˚C
MIN.
55
50
2
1
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
12
-
IRFZ48N
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
16
30
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL
g
fs
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
PARAMETER
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
8
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
39
2200
500
200
-
-
-
18
35
45
30
3.5
4.5
7.5
MAX.
-
2900
600
270
85
19
37
26
85
60
45
-
-
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
I
D
= 50 A; V
DD
= 44 V; V
GS
= 10 V
V
DD
= 30 V; I
D
= 25 A;
V
GS
= 10 V; R
G
= 10
Ω
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
February 1999
2
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
