Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ48N
SOAX514
RDS(ON)/mOhm
30
VGS/V =
6
6.5
7
20
8
15
9
10
1000
ID / A
RDS(ON) = VDS/ID
100
tp =
1 us
10 us
100 us
DC
1 ms
25
10
10
10 ms
100 ms
1
5
1
10
VDS / V
55
100
0
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
ID/A
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
100
ID/A
80
1E+01
Zth / (K/W)
BUKX514-55
1E+00
0.5
1E-01
0.2
0.1
0.05
0.02
1E-02
0
T
t
20
60
P
D
t
p
D=
t
p
T
40
Tj/C =
175
25
1E-03
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
0
0
1
2
3
4
5
VGS/V
6
7
8
9
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
100
ID/A
80
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
40
gfs/S
35
30
16
10
8
7.5
VGS/V =
7
6.5
60
6
40
5.5
25
20
15
10
20
5
0
4.5
4
0
2
4
VDS/V
6
8
10
5
0
0
20
40
60
80
100
ID/A
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
February 1999
4
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
