Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
I
DR
I
DRM
V
SD
t
rr
Q
rr
PARAMETER
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
I
F
= 25 A; V
GS
= 0 V
I
F
= 65 A; V
GS
= 0 V
I
F
= 65 A; -dI
F
/dt = 100 A/µs;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
TYP.
-
-
0.95
1.0
57
0.14
IRFZ48N
MAX.
64
210
1.2
-
-
-
UNIT
A
A
V
V
ns
µC
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 65 A; V
DD
≤
25 V;
V
GS
= 10 V; R
GS
= 50
Ω;
T
mb
= 25 ˚C
MIN.
-
TYP.
-
MAX.
200
UNIT
mJ
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
ID%
Normalised Current Derating
0
20
40
60
80 100
Tmb / C
120
140
160
180
0
20
40
60
80 100
Tmb / C
120
140
160
180
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
February 1999
3
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
