HEF4017B-Q100
NXP Semiconductors
5-stage Johnson decade counter
9. Static characteristics
Table 6.
Static characteristics
VSS = 0 V; VI = VSS or VDD unless otherwise specified.
Symbol Parameter
Conditions
VDD
Tamb = 40 C Tamb = 25 C Tamb = 85 C Tamb = 125 C Unit
Min
Max
Min
Max
-
Min
Max
Min
Max
VIH
HIGH-level
input voltage
IO < 1 A
5 V
10 V
15 V
5 V
3.5
-
-
3.5
3.5
-
-
3.5
-
-
V
V
V
V
V
V
V
V
V
V
V
V
7.0
7.0
-
7.0
7.0
11.0
-
11.0
-
11.0
-
11.0
-
VIL
LOW-level
input voltage
IO < 1 A
IO < 1 A;
-
1.5
3.0
4.0
-
-
1.5
3.0
4.0
-
-
1.5
3.0
4.0
-
-
1.5
3.0
4.0
-
10 V
15 V
5 V
-
-
-
-
-
-
-
-
VOH
VOL
IOH
HIGH-level
output voltage VI = VSS or VDD
4.95
4.95
4.95
4.95
10 V
15 V
5 V
9.95
-
9.95
-
9.95
-
9.95
-
14.95
-
14.95
-
14.95
-
14.95
-
LOW-level
output voltage VI = VSS or VDD
IO < 1 A;
-
0.05
0.05
0.05
1.7
0.64
1.6
4.2
-
-
0.05
0.05
0.05
1.4
0.5
1.3
3.4
-
-
0.05
0.05
0.05
1.1
0.36
0.9
2.4
-
-
0.05
0.05
0.05
10 V
15 V
5 V
-
-
-
-
-
-
-
-
HIGH-level
output current
VO = 2.5 V
VO = 4.6 V
VO = 9.5 V
VO = 13.5 V
VO = 0.4 V
VO = 0.5 V
VO = 1.5 V
-
-
-
-
-
1.1 mA
0.36 mA
0.9 mA
2.4 mA
5 V
-
-
-
-
-
-
10 V
15 V
5 V
-
-
-
-
-
IOL
LOW-level
output current
0.64
1.6
4.2
-
0.5
1.3
3.4
-
0.36
0.9
2.4
-
0.36
0.9
2.4
-
-
-
-
mA
mA
mA
10 V
15 V
15 V
-
-
-
-
-
-
II
input leakage
current
0.1
0.1
1.0
1.0 A
IDD
supply current IO = 0 A;
VI = VSS or VDD
5 V
10 V
15 V
-
-
-
-
-
5
10
20
-
-
-
-
-
5
-
-
-
-
150
300
600
-
-
-
-
-
150 A
300 A
600 A
10
20
7.5
CI
input
-
pF
capacitance
HEF4017B_Q100
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 4 June 2014
7 of 18
NXP [ NXP ]
