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HEF4017BT-Q100 参数 Datasheet PDF下载

HEF4017BT-Q100图片预览
型号: HEF4017BT-Q100
PDF下载: 下载PDF文件 查看货源
内容描述: [4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 10-BIT UP RING COUNTER, PDSO16, 3.90 MM, PLASTIC, MS-012, SOT109-1, SOP-16]
分类和应用: 光电二极管逻辑集成电路触发器
文件页数/大小: 18 页 / 119 K
品牌: NXP [ NXP ]
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HEF4017B-Q100  
NXP Semiconductors  
5-stage Johnson decade counter  
Table 7.  
Dynamic characteristics …continued  
Tamb = 25 C; VSS = 0 V; for test circuit see Figure 10  
Symbol Parameter  
Conditions  
VDD  
5 V  
Extrapolation formula[1]  
Min Typ Max Unit  
tW  
pulse width  
CP0 input LOW;  
minimum width;  
see Figure 8  
80  
40  
30  
80  
40  
30  
50  
30  
20  
60  
30  
20  
6
40  
20  
15  
40  
20  
15  
25  
15  
10  
30  
15  
10  
12  
30  
30  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
10 V  
15 V  
5 V  
ns  
ns  
CP1 input HIGH;  
minimum width;  
see Figure 8  
ns  
10 V  
15 V  
5 V  
ns  
ns  
MR input HIGH;  
minimum width;  
see Figure 8  
ns  
10 V  
15 V  
5 V  
ns  
ns  
trec  
recovery time  
MR input;  
see Figure 8  
ns  
10 V  
15 V  
5 V  
ns  
ns  
fmax  
maximum  
frequency  
see Figure 8  
MHz  
MHz  
MHz  
10 V  
15 V  
12  
15  
[1] The typical values of the propagation delay and transition times are calculated from the extrapolation formulas shown (CL in pF).  
[2] tt is the same as tTHL and tTLH  
.
Table 8.  
Dynamic power dissipation PD  
PD can be calculated from the formulas shown. VSS = 0 V; tr = tf 20 ns; Tamb = 25 C.  
Symbol  
Parameter  
VDD  
5 V  
Typical formula for PD (W)  
PD = 500 fi + (fo CL) VDD  
where:  
2
PD  
dynamic power  
dissipation  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
2
2
10 V  
15 V  
PD = 2200 fi + (fo CL) VDD  
PD = 6000 fi + (fo CL) VDD  
CL = output load capacitance in pF;  
DD = supply voltage in V;  
(CL fo) = sum of the outputs.  
V
HEF4017B_Q100  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 1 — 4 June 2014  
9 of 18  
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