Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGE812
MGE810
handbook, halfpage
30
|yfs|
(mS)
24
VG2-S = 4 V
handbook, halfpage
1.5
Cos
(pF)
1.4
3V
18
1.3
12
2V
1.2
12 mA
6
1V
1.1
10 mA
8 mA
0V
0
−1
1.0
0
VG1 (V)
1
4
6
8
10
12
VDS (V)
14
V
DS
= 8 V; T
amb
= 25
°C.
V
G2-S
= 4 V; f = 1 MHz; T
amb
= 25
°C.
Fig.9
Forward transfer admittance as a function of
gate 1 voltage; typical values.
Fig.10 Output capacitance as a function of
drain-source voltage; typical values.
handbook, halfpage
2.3
Cis
2.1
MGE809
MBH479
handbook, halfpage
2.4
(pF)
Cis
(pF)
2.3
1.9
2.2
1.7
2.1
1.5
1.3
−2.4
−1.6
−0.8
2.0
0
0.8
VG1-S (V)
6
4
2
0
−2
VG2−S (V)
V
DS
= 8 V; V
G2-S
= 4 V; f = 1 MHz; T
amb
= 25
°C.
V
DS
= 8 V; V
G1-S
= 0 V; f = 1 MHz; T
amb
= 25
°C.
Fig.11 Gate 1 input capacitance as a function of
gate 1-source voltage; typical values.
Fig.12 Gate 1 input capacitance as a function of
gate 2-source voltage; typical values.
1996 Aug 01
6
PHILIPS [ NXP SEMICONDUCTORS ]
