Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGC466
10
y is
(mS)
b is
1
10
3
y rs
(µS)
10
2
MGC467
10
3
ϕ
rs
(deg)
ϕ
rs
y rs
10
2
10
1
g is
10
10
10
2
10
10
2
f (MHz)
10
3
1
10
1
10
2
f (MHz)
10
3
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 10 mA; T
amb
= 25
°C.
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 10 mA; T
amb
= 25
°C.
Fig.13 Input admittance as a function of the
frequency; typical values.
Fig.14 Reverse transfer admittance and phase as a
function of frequency; typical values.
10
2
MGC468
10
2
MGC469
10
yos
(mS)
1
bos
y fs
(mS)
y fs
ϕ
fs
(deg)
10
ϕ
10
fs
10
1
gos
1
10
1
10
2
f (MHz)
10
3
10
2
10
10
2
f (MHz)
10
3
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 10 mA; T
amb
= 25
°C.
V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 10 mA; T
amb
= 25
°C.
Fig.15 Forward transfer admittance and phase as a
function of frequency; typical values.
Fig.16 Output admittance as a function of the
frequency; typical values.
1996 Aug 01
7
PHILIPS [ NXP SEMICONDUCTORS ]
