Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
FEATURES
•
Short channel transistor with high forward transfer
admittance to input capacitance ratio
•
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
•
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
Top view
handbook, halfpage
BF998; BF998R
4
3
g2
g1
d
1
2
s,b
MAM039
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143 or SOT143R package with source
and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Marking code:
MOp.
Fig.1
Simplified outline (SOT143)
and symbol; BF998.
handbook, halfpage
d
4
g2
g1
3
PINNING
PIN
1
2
3
4
SYMBOL
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
DESCRIPTION
Top view
2
1
s,b
MAM040
Marking code:
MOp.
Fig.2
Simplified outline (SOT143R)
and symbol; BF998R.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
y
fs
C
ig1-s
C
rs
F
T
j
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
operating junction temperature
f = 1 MHz
f = 800 MHz
PARAMETER
drain-source voltage
CONDITIONS
−
−
−
24
2.1
25
1
−
TYP.
MAX.
12
30
200
−
−
−
−
150
V
mA
mW
mS
pF
fF
dB
°C
UNIT
1996 Aug 01
2
PHILIPS [ NXP SEMICONDUCTORS ]
