Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGE807
MGE808
0
0
handbook, halfpage
handbook, halfpage
∆G
∆G
tr
tr
(dB)
I
(dB)
=
DSS
−10
−20
−30
−40
−50
−10
max
typ
min
−20
−30
I
=
DSS
−40
−50
max
typ
min
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
agc
agc
VDD = 12 V; f = 200 MHz; Tamb = 25 °C.
VDD = 12 V; f = 800 MHz; Tamb = 25 °C.
Fig.19 Automaticgaincontrolcharacteristics
measured in circuit of Fig.17.
Fig.20 Automatic gain control characteristics
measured in circuit of Fig.18.
1996 Aug 01
10
NXP [ NXP ]
