Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
handbook, halfpage
I
24
MGE813
D
(mA)
handbook, halfpage
I
24
MGE815
VG1-S =
0.4 V
0.3 V
20
D
(mA)
20
3V
VG2-S = 4 V
2V
1V
16
0.2 V
0.1 V
0V
16
12
12
8
−0.1
V
−0.2
V
8
0V
4
0
0
2
4
6
8
VDS (V)
−0.3
V
−0.4
V
−0.5
V
10
4
0
−1
0
VG1 (V)
1
V
G2-S
= 4 V; T
amb
= 25
°C.
V
DS
= 8 V; T
amb
= 25
°C.
Fig.5 Output characteristics; typical values.
Fig.6 Transfer characteristics; typical values.
handbook, halfpage
I
24
MGE814
MGE811
D
(mA)
20
handbook, halfpage
30
max
typ
|yfs|
(mS)
24
4V
3V
2V
1V
16
18
12
min
12
8
6
VG2-S = 0 V
0
0
4
8
12
16
ID (mA)
20
0.5 V
4
0
−1600
−1200
−800
−400
0
VG1 (mV)
400
V
DS
= 8 V; V
G2-S
= 4 V; T
amb
= 25
°C.
V
DS
= 8 V; T
amb
= 25
°C.
Fig.7
Drain current as a function of gate 1
voltage; typical values.
Fig.8
Forward transfer admittance as a function of
drain current; typical values.
1996 Aug 01
5
PHILIPS [ NXP SEMICONDUCTORS ]
