PE9763
Product Specification
Table 2. Absolute Maximum Ratings
Electrostatic Discharge (ESD) Precautions
Symbol
Parameter/Conditions Min Max Units
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified in Table 4.
VDD
VI
Supply voltage
-0.3
-0.3
4.0
VDD
V
V
Voltage on any input
+
0.3
II
DC into any input
-10
-10
-65
+10
mA
mA
°C
IO
DC into any output
+10
150
Tstg
Storage temperature range
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Table 3. Operating Ratings
Symbol
Parameter/Conditions Min
Max Units
VDD
TA
Supply voltage
2.85
-40
3.15
85
V
Operating ambient
temperature range
°C
Table 4. ESD Ratings
Symbol
Parameter/Conditions
Level Units
VESD
ESD voltage human body model
(Note 1)
1000
V
Note 1: Periodically sampled, not 100% tested. Tested per MIL-
STD-883, M3015 C2
Document No. 70-0140-01 │ www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
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