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RSL10 参数 Datasheet PDF下载

RSL10图片预览
型号: RSL10
PDF下载: 下载PDF文件 查看货源
内容描述: []
分类和应用:
文件页数/大小: 20 页 / 502 K
品牌: ONSEMI [ ONSEMI ]
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RSL10  
Table 2. RECOMMENDED OPERATING CONDITIONS  
Description  
Symbol  
Conditions  
Input supply voltage on VBAT pin (Note 1)  
Min  
Typ  
Max  
Units  
Supply voltage operating range  
VBAT  
1.25  
1.25  
3.3  
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
(ꢀꢁꢂꢃ)  
nᖈภ࿅ļꢐꢑꢎ᨜ꢆꢇ៖,⛽ƽᚑ்૿ᵃဘ᪠ጜ⁏៖⃄ईᖈภ࿅ļꢐꢑꢎ᨜ᒔꢍꢐꢑÅ૶ꢏꢆꢇ᪠ጜ,
׏
ࡈڭ
ꢏ  
׏
∰ሇ。  
1. In order to be able to use a VBAT Min of 1.1 V:  
The minimum VDDM target trimming voltage of 1.05 V should be used.  
VBAT should be connected to VCC at the schematic level  
In this configuration, VBAT shouldn’t exceed 1.32 V. Please contact your ON sales representatives in case of questions.  
Table 3. ELECTRICAL PERFORMANCE SPECIFICATIONS  
Unless otherwise noted, the specifications mentioned in the table below are valid at 25°C at VBAT = VDDO = 1.25 V.  
Description  
Symbol  
Conditions  
Min  
Typ  
Max  
Units  
OVERALL  
Current consumption RX,  
BAT  
I
RX Mode, ON Semiconductor propri-  
etary audio streaming protocol at 7 kHz  
audio BW, 5.5 ms delay.  
1.8  
mA  
VBAT  
VBAT  
V
= 1.25 V, low latency  
Current consumption TX,  
= 1.25 V, low latency  
I
TX Mode, ON Semiconductor propri-  
etary audio streaming protocol at 7 kHz  
audio BW, 5.5 ms delay. Transmit pow-  
er: 0 dBm  
1.8  
mA  
mA  
V
BAT  
Current consumption RX,  
= 1.25 V  
I
RX Mode, ON Semiconductor propri-  
etary audio streaming protocol at 7 kHz  
audio BW, 37 ms delay.  
1.15  
VBAT  
V
BAT  
Deep sleep current,  
example 1, V = 1.25 V  
Ids1  
Ids2  
Ids3  
Istb  
Wake up from wake up pin.  
50  
90  
nA  
nA  
nA  
mA  
BAT  
Deep sleep current,  
example 2, V = 1.25 V  
Embedded 32 kHz oscillator running  
with interrupts from timer or external pin.  
BAT  
Deep sleep current,  
example 3, V = 1.25 V  
As Ids2 but with 8 kB RAM data reten-  
tion.  
300  
30  
BAT  
Standby Mode current,  
= 1.25 V  
Digital blocks and memories are not  
clocked and are powered at a reduced  
voltage.  
V
BAT  
Current consumption RX,  
= 3 V  
I
RX Mode, ON Semiconductor propri-  
etary audio streaming protocol at 7 kHz  
audio BW, 5.5 ms delay.  
0.9  
0.9  
mA  
mA  
VBAT  
V
BAT  
Current consumption TX,  
= 3 V  
I
TX Mode, ON Semiconductor propri-  
etary audio streaming protocol at 7 kHz  
audio BW, 5.5 ms delay. Transmit pow-  
er: 0 dBm  
VBAT  
V
BAT  
Deep sleep current,  
example 1, V = 3 V  
Ids1  
Ids2  
Ids3  
Istb  
Wake up form wake up pin.  
25  
40  
nA  
nA  
nA  
mA  
BAT  
Deep sleep current,  
example 2, V = 3 V  
Embedded 32 kHz oscillator running  
with interrupts from timer or external pin.  
BAT  
Deep sleep current,  
example 3, V = 3 V  
As Ids2 but with 8 kB RAM data reten-  
tion.  
100  
17  
BAT  
Standby Mode current,  
= 3 V  
Digital blocks and memories are not  
clocked and are powered at a reduced  
voltage.  
V
BAT  
EEMBC CoreMark BENCHMARK for the Arm CortexM3 Processor and the LPDSP32 DSP  
Arm CortexM3 processor  
At 48 MHz SYSCLK. Using the IAR  
8.10.1 C compiler, certified  
159  
133  
Core  
Mark  
running from RAM  
LPDSP32 running from RAM  
At 48 MHz SYSCLK  
Using the 2017.03SP32 release of  
the Synopsys LPDSP32 C compiler  
Core  
Mark  
www.onsemi.cn  
4
 
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