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NCL37733BSNT1G 参数 Datasheet PDF下载

NCL37733BSNT1G图片预览
型号: NCL37733BSNT1G
PDF下载: 下载PDF文件 查看货源
内容描述: [LED Driver with Power Factor Correction, Primary-Side-Regulated]
分类和应用:
文件页数/大小: 16 页 / 317 K
品牌: ONSEMI [ ONSEMI ]
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NCL37733  
Table 3. ELECTRICAL CHARACTERISTICS  
(Unless otherwise noted: For typical values T = 25°C, V = 12 V, V = 0 V  
J
CC  
CS/ZCD  
For min/max values T = 40°C to +125°C, Max T = 150°C, V = 12 V)  
J
J
CC  
Description  
Test Condition  
Symbol  
Min  
Typ  
Max  
Unit  
Startup and Supply Circuits  
Supply Voltage  
V
Startup Threshold  
Minimum Operating Voltage  
V
increasing  
decreasing  
decreasing  
decreasing  
V
V
16.0  
8.2  
8.0  
4.0  
18.0  
8.8  
20.0  
9.4  
CC  
CC(on)  
V
CC  
V
CC  
V
CC  
CC(off)  
Hysteresis V  
– V  
V
CC(on)  
CC(off)  
CC(HYS)  
CC(reset)  
Internal logic reset  
V
4.8  
6.0  
Threshold for V Over Voltage Protection  
V
25.5  
26.8  
28.5  
V
CC  
CC(OVP)  
V
V
noise filter  
t
5
20  
ms  
CC(off)  
VCC(off)  
noise filter  
t
CC(reset)  
VCC(reset)  
Startup current  
V
CC  
=15.9 V  
I
13  
58  
30  
75  
mA  
mA  
CC(start)  
Startup current in fault mode  
I
CC(sFault)  
Supply Current  
mA  
Device Disabled / Fault  
Device Enabled / No output load on pin 5  
Device Switching  
V
F
> V  
= 65 kHz  
I
I
I
1.15  
1.34  
2.0  
2.5  
1.55  
3.5  
4.0  
CC  
CC(off)  
CC1  
CC2  
CC3  
sw  
C
= 470 pF, F = 65 kHz  
DRV  
sw  
Current Sense  
Maximum Internal current limit  
V
0.94  
220  
0.99  
275  
1.04  
340  
V
ILIM  
Leading Edge Blanking Duration for Current  
Sensing  
t
ns  
LEB  
Propagation delay from current detection to gate  
offstate  
t
100  
150  
ns  
ILIM  
Maximum ontime  
t
26  
1.35  
36  
46  
1.65  
ms  
V
on(MAX)  
Threshold for immediate fault protection activation  
V
1.50  
175  
CS(stop)  
Leading Edge Blanking Duration for V  
(Note 1)  
t
ns  
CS(stop)  
BCS  
Current source for CS to GND short detection  
I
420  
30  
520  
90  
620  
150  
mA  
CS(short)  
Current sense threshold for CS to GND short  
detection  
V
CS  
rising  
V
mV  
CS(low)  
Gate Drive  
Drive Resistance  
DRV Sink  
W
R
R
13  
30  
SNK  
DRV Source  
SRC  
Drive current capability  
DRV Sink (Note 2)  
mA  
I
150  
100  
SNK  
DRV Source (Note 2)  
I
SRC  
Rise Time (10 % to 90 %) (Note 2)  
Fall Time (90 % to 10 %) (Note 2)  
DRV Low Voltage  
C
C
= 470 pF  
= 470 pF  
t
8
45  
35  
ns  
ns  
V
DRV  
r
t
DRV  
f
V
= V  
+0.2 V  
CC(off)  
V
CC  
DRV(low)  
C
C
= 470 pF, R  
=33 kW  
DRV  
DRV  
DRV High Voltage  
V
CC  
= V  
V
10  
12  
14  
V
CC(MAX)  
DRV(high)  
= 470 pF, R  
=33 kW  
DRV  
DRV  
Zero Voltage Detection Circuit  
Upper ZCD threshold voltage  
Lower ZCD threshold voltage  
ZCD hysteresis  
V
rising  
V
90  
55  
150  
mV  
mV  
mV  
ZCD  
ZCD(rising)  
V
ZCD  
falling  
V
35  
15  
ZCD(falling)  
V
ZCD(HYS)  
www.onsemi.com  
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