NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Thermal characteristics
…continued
Parameter
thermal resistance from
junction to solder point
BAV756S
BAW56
BAW56S
BAW56T
BAW56W
-
-
-
-
-
-
-
-
-
-
255
360
255
350
300
K/W
K/W
K/W
K/W
K/W
Conditions
Min
Typ
Max
Unit
Table 7.
Symbol
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
[3]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
1.25
30
0.5
30
150
2
4
1.75
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 0 V; f = 1 MHz
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
5 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
