NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
10
3
I
F
(mA)
10
2
006aab109
10
2
I
FSM
(A)
10
mbg704
10
1
(1)
(2)
(3)
(4)
1
10
−1
0.2
10
−1
0.6
1.0
V
F
(V)
1.4
1
10
10
2
10
3
t
p
(µs)
10
4
(1) T
amb
= 150
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values
10
2
(1)
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbh191
006aab110
I
R
(µA)
10
1
2.5
C
d
(pF)
2.0
(2)
10
−1
10
−2
10
−3
10
−4
10
−5
0
20
40
60
80
V
R
(V)
100
(3)
1.5
1.0
0.5
(4)
0
0
5
10
15
20
V
R
(V)
25
(1) T
amb
= 150
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
f = 1 MHz; T
amb
= 25
°C
Fig 3. Reverse current as a function of reverse
voltage; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
6 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
