NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
FRM
I
FSM
Parameter
repetitive peak forward
current
non-repetitive peak forward
current
square wave
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
total power dissipation
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
Per device
I
F
forward current
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Conditions
Min
-
Max
500
Unit
mA
-
-
-
-
-
4
1
0.5
350
250
250
350
170
200
A
A
A
mW
mW
mW
mW
mW
mW
T
s
= 60
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
= 60
°C
T
s
= 90
°C
T
amb
≤
25
°C
-
-
-
-
T
s
= 60
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
= 60
°C
T
s
= 90
°C
T
amb
≤
25
°C
-
-
-
-
-
-
-
−65
−65
100
125
75
100
75
130
150
+150
+150
mA
mA
mA
mA
mA
mA
°C
°C
°C
junction temperature
ambient temperature
storage temperature
T
j
= 25
°C
prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Single diode loaded.
6. Thermal characteristics
Table 7.
Symbol
Per diode
R
th(j-a)
thermal resistance from
junction to ambient
BAW56
BAW56M
BAW56W
Thermal characteristics
Parameter
Conditions
in free air
Min
Typ
Max
Unit
-
-
-
-
-
-
500
500
625
K/W
K/W
K/W
BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
4 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
