BAV756S; BAW56 series
High-speed switching diodes
Rev. 05 — 26 November 2007
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
SOT363
SOT23
SOT883
SOT363
SOT416
SOT323
JEITA
SC-88
-
SC-101
SC-88
SC-75
SC-70
JEDEC
-
Package
configuration
very small
Configuration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
Type number
TO-236AB small
-
-
-
-
leadless ultra
small
very small
ultra small
very small
1.2 Features
I
High switching speed: t
rr
≤
4 ns
I
Low leakage current
I
Small SMD plastic packages
I
Low capacitance: C
d
≤
2 pF
I
Reverse voltage: V
R
≤
90 V
1.3 Applications
I
High-speed switching
I
General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
90
4
Unit
µA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.