TYPICAL CHARACTERISTICS — 595–652 MHz
20
19
70
V
DD
= 48 Vdc, P = 120 W (Avg.), I
= 700 mA, V
= 0.5 Vdc
out
DQA
GSB
60
50
40
D
G
ps
18
17
16
15
14
13
12
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
30
–2.5
–3.0
–20
–22
–24
–26
–28
–30
PARC
–3.5
–4.0
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
ACPR
660
–4.5
–5.0
11
10
540
560
580
600
620
640
680
700
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 120 Watts Avg.
–20
IM3--L
–30
IM3--U
IM5--L
–40
IM5--U
IM7--L
IM7--U
–50
V
= 48 Vdc, P = 112 W (PEP)
out
DD
–60
–70
I
= 700 mA, V
= 0.5 Vdc
DQA
GSB
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 623 MHz
1
10
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–22
–24
–26
–28
–30
–32
–34
18.5
18.0
0
–1
–2
–3
70
65
V
= 48 Vdc, I
= 700 mA, V
= 0.5 Vdc, f = 623 MHz
DD
DQA
GSB
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
–1 dB = 69.5 W
D
–2 dB = 92.9 W
60
17.5
17.0
16.5
G
ps
ACPR
55
50
–4
PARC
200
–3 dB = 125.1 W
45
40
16.0
15.5
–5
–6
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
50
100
150
250
300
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2V07H525--04NR6
RF Device Data
NXP Semiconductors
5