Document Number: A2V07H525--04N
Rev. 0, 07/2017
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 120 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 595 to
851 MHz.
A2V07H525--04NR6
600 MHz
595–851 MHz, 120 W AVG., 48 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQA = 700 mA, VGSB = 0.5 Vdc, Pout = 120 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
595 MHz
623 MHz
652 MHz
(dB)
17.8
17.5
17.3
(%)
54.7
56.9
53.4
6.8
7.2
6.8
–27.5
–29.2
–27.2
780 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
DQA = 700 mA, VGSB = 1.25 Vdc, Pout = 120 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
I
OM--1230--4L
PLASTIC
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
758 MHz
780 MHz
803 MHz
(dB)
18.4
18.3
17.5
(%)
53.0
54.1
54.1
7.1
7.1
6.7
–31.1
–31.1
–30.6
Carrier
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
Features
RF /V
inB GSB
RF /V
outB DSB
Advanced high performance in--package Doherty
Peaking
Greater negative gate--source voltage range for improved Class C
operation
Designed for digital predistortion error correction systems
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
2017 NXP B.V.
A2V07H525--04NR6
RF Device Data
NXP Semiconductors
1
NXP [ NXP ]
