欢迎访问ic37.com |
会员登录 免费注册
发布采购

A2V07H525-04N 参数 Datasheet PDF下载

A2V07H525-04N图片预览
型号: A2V07H525-04N
PDF下载: 下载PDF文件 查看货源
内容描述: [N--Channel Enhancement--Mode Lateral MOSFET]
分类和应用:
文件页数/大小: 25 页 / 1056 K
品牌: NXP [ NXP ]
 浏览型号A2V07H525-04N的Datasheet PDF文件第1页浏览型号A2V07H525-04N的Datasheet PDF文件第3页浏览型号A2V07H525-04N的Datasheet PDF文件第4页浏览型号A2V07H525-04N的Datasheet PDF文件第5页浏览型号A2V07H525-04N的Datasheet PDF文件第6页浏览型号A2V07H525-04N的Datasheet PDF文件第7页浏览型号A2V07H525-04N的Datasheet PDF文件第8页浏览型号A2V07H525-04N的Datasheet PDF文件第9页  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
C  
Drain--Source Voltage  
V
–0.5, +105  
–6.0, +10  
55, +0  
DSS  
Gate--Source Voltage  
V
GS  
DD  
Operating Voltage  
V
Storage Temperature Range  
Case Operating Temperature Range  
T
stg  
–65 to +150  
–40 to +150  
–40 to +225  
T
C
C  
(1,2)  
Operating Junction Temperature Range  
T
J
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
0.37  
C/W  
JC  
Case Temperature 77C, 120 W Avg., W--CDMA, 48 Vdc, I  
= 700 mA,  
DQA  
V
= 0.5 Vdc, 623 MHz  
GSB  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
2
Human Body Model (per JESD22--A114)  
Charge Device Model (per JESD22--C101)  
C3  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD22--A113, IPC/JEDEC J--STD--020  
3
260  
C  
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
(4)  
Off Characteristics  
Zero Gate Voltage Drain Leakage Current  
I
I
10  
1
Adc  
Adc  
Adc  
DSS  
DSS  
GSS  
(V = 105 Vdc, V = 0 Vdc)  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
(V = 55 Vdc, V = 0 Vdc)  
DS  
GS  
Gate--Source Leakage Current  
(V = 5 Vdc, V = 0 Vdc)  
I
1
GS  
DS  
On Characteristics -- Side A, Carrier  
Gate Threshold Voltage  
V
1.3  
2.0  
0.1  
1.8  
2.5  
2.3  
3.3  
0.5  
Vdc  
Vdc  
Vdc  
GS(th)  
(V = 10 Vdc, I = 140 Adc)  
DS  
D
Gate Quiescent Voltage  
(V = 48 Vdc, I = 700 mAdc, Measured in Functional Test)  
V
GSA(Q)  
DD  
DA  
Drain--Source On--Voltage  
(V = 10 Vdc, I = 1.4 Adc)  
V
0.21  
DS(on)  
GS  
D
On Characteristics -- Side B, Peaking  
Gate Threshold Voltage  
V
1.3  
0.1  
1.8  
2.3  
0.5  
Vdc  
Vdc  
GS(th)  
(V = 10 Vdc, I = 280 Adc)  
DS  
D
Drain--Source On--Voltage  
(V = 10 Vdc, I = 2.8 Adc)  
V
0.21  
DS(on)  
GS  
D
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.nxp.com/RF/calculators.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.  
4. Each side of device measured separately.  
(continued)  
A2V07H525--04NR6  
RF Device Data  
NXP Semiconductors  
2