Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In NXP Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 700 mA, V = 0.5 Vdc,
GSB
DD
DQA
P
= 120 W Avg., f = 623 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
16.8
54.2
6.5
17.5
56.9
7.2
20.0
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
ACPR
—
dB
dBc
Adjacent Channel Power Ratio
—
–29.2
–27.0
(2)
Load Mismatch
(In NXP Doherty Test Fixture, 50 ohm system) I
= 700 mA, V
= 0.5 Vdc, f = 623 MHz, 12 sec(on), 10% Duty
GSB
DQA
Cycle
VSWR 10:1 at 55 Vdc, 363 W Pulsed CW Output Power
(3 dB Input Overdrive from 182 W Pulsed CW Rated Power)
No Device Degradation
(2)
Typical Performance
(In NXP Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 700 mA, V
= 0.5 Vdc,
GSB
DD
DQA
595–652 MHz Bandwidth
(3)
P
@ 3 dB Compression Point
P3dB
—
—
602
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
–18
the 595–652 MHz frequency range)
VBW Resonance Point
VBW
—
70
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 57 MHz Bandwidth @ P = 120 W Avg.
G
—
—
0.6
—
—
dB
out
F
Gain Variation over Temperature
G
0.005
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.003
—
dB/C
(--30C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
A2V07H525--04NR6
1. Part internally input matched.
OM--1230--4L
2. Measurement made with device in an asymmetrical Doherty configuration.
3. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2V07H525--04NR6
RF Device Data
NXP Semiconductors
3
NXP [ NXP ]
