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M25PE80-VMN6P 参数 Datasheet PDF下载

M25PE80-VMN6P图片预览
型号: M25PE80-VMN6P
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存内存集成电路
文件页数/大小: 66 页 / 1387 K
品牌: NUMONYX [ NUMONYX B.V ]
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Operating features  
M25PE80  
4
Operating features  
4.1  
Sharing the overhead of modifying data  
To write or program one (or more) data bytes, two instructions are required: write enable  
(WREN), which is one byte, and a page write (PW) or page program (PP) sequence, which  
consists of four bytes plus data. This is followed by the internal cycle (of duration t  
or t ).  
PW  
PP  
To share this overhead, the page write (PW) or page program (PP) instruction allows up to  
256 bytes to be programmed (changing bits from 1 to 0) or written (changing bits to 0 or 1) at  
a time, provided that they lie in consecutive addresses on the same page of memory.  
4.2  
An easy way to modify data  
The page write (PW) instruction provides a convenient way of modifying data (up to 256  
contiguous bytes at a time), and simply requires the start address, and the new data in the  
instruction sequence.  
The page write (PW) instruction is entered by driving Chip Select (S) Low, and then  
transmitting the instruction byte, three address bytes (A23-A0) and at least one data byte,  
and then driving Chip Select (S) High. While Chip Select (S) is being held Low, the data  
bytes are written to the data buffer, starting at the address given in the third address byte  
(A7-A0). When Chip Select (S) is driven High, the write cycle starts. The remaining,  
unchanged, bytes of the data buffer are automatically loaded with the values of the  
corresponding bytes of the addressed memory page. The addressed memory page then  
automatically put into an erase cycle. Finally, the addressed memory page is programmed  
with the contents of the data buffer.  
All of this buffer management is handled internally, and is transparent to the user. The user  
is given the facility of being able to alter the contents of the memory on a byte-by-byte basis.  
For optimized timings, it is recommended to use the page write (PW) instruction to write all  
consecutive targeted bytes in a single sequence versus using several page write (PW)  
sequences with each containing only a few bytes (see Section 6.9: Page write (PW),  
Table 22: AC characteristics, and Table 24: AC characteristics (75 MHz operation, T9HX  
(0.11 µm) process)).  
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