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M25PE80-VMN6P 参数 Datasheet PDF下载

M25PE80-VMN6P图片预览
型号: M25PE80-VMN6P
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存内存集成电路
文件页数/大小: 66 页 / 1387 K
品牌: NUMONYX [ NUMONYX B.V ]
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Operating features  
M25PE80  
4.7  
Status register  
The status register contains a number of status and control bits that can be read or set (as  
appropriate) by using specific instructions. See Section 6.4: Read status register (RDSR) for  
a detailed description of the status register bits.  
4.8  
Protection modes  
The environments where non-volatile memory devices are used can be very noisy. No SPI  
device can operate correctly in the presence of excessive noise. To help combat this, the  
M25PE80 features the following data protection mechanisms:  
4.8.1  
Protocol-related protections  
Power on reset and an internal timer (t  
changes while the power supply is outside the operating specification.  
) can provide protection against inadvertent  
PUW  
Program, erase and write instructions are checked that they consist of a number of  
clock pulses that is a multiple of eight, before they are accepted for execution.  
All instructions that modify data must be preceded by a write enable (WREN)  
instruction to set the write enable latch (WEL) bit. This bit is returned to its reset state  
by the following events:  
Power-up  
Reset (Reset) driven Low  
Write disable (WRDI) instruction completion  
Page write (PW) instruction completion  
Page program (PP) instruction completion  
Write to lock register (WRLR) instruction completion  
Page erase (PE) instruction completion  
Subsector erase (SSE) instruction completion  
Sector erase (SE) instruction completion  
Bulk erase (BE) instruction completion  
The Reset (Reset) signal can be driven Low to freeze and reset the internal logic. For  
the specific cases of program and write cycles, the designer should refer to Section 6.5:  
Write status register (WRSR), Section 6.9: Page write (PW), Section 6.10: Page  
program (PP), Section 6.12: Page erase (PE), Section 6.14: Sector erase (SE) and  
Section 6.13: Subsector erase (SSE), and to Table 15: Device status after a Reset Low  
pulse.  
In addition to the low power consumption feature, the deep power-down mode offers  
extra software protection from inadvertent write, program and erase instructions while  
the device is not in active use.  
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