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M25PE80-VMN6P 参数 Datasheet PDF下载

M25PE80-VMN6P图片预览
型号: M25PE80-VMN6P
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存内存集成电路
文件页数/大小: 66 页 / 1387 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE80  
Signal descriptions  
2.6  
Write protect (W) or top sector lock (TSL)  
The write protect function is available in the T9HX process only (see Important  
note on page 6).  
The write protect (W) input is used to freeze the size of the area of memory that is  
protected against write, program and erase instructions (as specified by the values in  
the BP2, BP1 and BP0 bits of the status register. See Section 6.4: Read status register  
(RDSR) for a description of these bits).  
The top sector lock function is available in the T7Y process only (see Important  
note on page 6).  
The input signal sets the device in the hardware protected mode, when top sector lock  
(TSL) is connected to V , causing the top 256 pages (upper addresses) of the  
SS  
memory to become read-only (protected from write, program and erase operations).  
When top sector lock (TSL) is connected to V , the top 256 pages of memory behave  
CC  
like the other pages of memory.  
2.7  
2.8  
VCC supply voltage  
V
is the supply voltage.  
CC  
VSS ground  
V
is the reference for the V supply voltage.  
CC  
SS  
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