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JS28F256J3F105 参数 Datasheet PDF下载

JS28F256J3F105图片预览
型号: JS28F256J3F105
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 66 页 / 711 K
品牌: NUMONYX [ NUMONYX B.V ]
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®
Numonyx™ StrataFlash Embedded Memory (J3-65nm)  
5.0  
Bus Interface  
This section provides an overview of Bus operations. There are three operations flash  
memory: Read, Program (Write), and Erase.  
CE[2:0]-enable, OE#-low, WE#-high and RP#-high enable device read operations.  
Addresses are always assumed to be valid. OE#-low activates the outputs and gates  
selected data onto the I/O bus. WE#-low enables device write operations. Table 5  
summarizes the necessary states of each control signal for different modes of  
operations.  
Table 5:  
Bus Operations  
STS  
(Default  
Mode)  
(1)  
(2)  
(2)  
(3)  
15:0  
Mode  
RP#  
CE  
OE#  
WE#  
DQ  
V
Notes  
x
PEN  
Reads: Async., Status, Query and  
Identifier  
V
Enabled  
V
V
V
D
OUT  
High-Z  
X
4,6  
IH  
IL  
IH  
Output Disable  
V
V
V
V
V
Enabled  
High-Z  
High-Z  
High Z  
X
X
IH  
IH  
IH  
IH  
IH  
IH  
Command Writes  
Enabled  
Enabled  
Disabled  
X
V
V
V
V
D
D
6,7  
8,5  
IH  
IH  
IL  
IL  
IN  
IN  
(8)  
Array Writes  
V
V
IL  
PENH  
Standby  
X
X
High Z  
High Z  
High Z  
High Z  
X
Reset/Power-down  
Notes:  
V
X
X
X
IL  
1.  
2.  
3.  
4.  
5.  
6.  
See Table 6 for valid CE Configurations.  
x
OE# and WE# should never be asserted simultaneously. If done so, OE# overrides WE#.  
DQ refers to DQ[7:0] when BYTE# is low and DQ[15:0] if BYTE# is high.  
Refer to DC characteristics. When VPEN V  
, memory contents can be read but not altered.  
PENLK  
X should be V or V for the control pins and V  
or V  
for V  
. For outputs, X should be V or V  
.
OH  
IL  
IH  
PENLK  
PENH  
PEN  
OL  
In default mode, STS is V when the WSM is executing internal block erase, program, or a lock-bit configuration  
OL  
algorithm. It is V (pulled up by an external pull up resistance 10k) when the WSM is not busy, in block erase suspend  
OH  
mode (with programming inactive), program suspend mode, or reset power-down mode.  
See Table 7 for valid DIN (user commands) during a Write operation  
Array writes are either program or erase operations.  
7.  
8.  
CE0, CE1 and CE2 control device activation. With the proper input (see Figure 6, “Chip  
Enable Truth Table for 256-Mb) the device gets selected, which in turn activates its  
internal circuits. WE# and OE# determine the direction of the data buffers (input or  
output).  
Table 6:  
Chip Enable Truth Table for 256-Mb  
CE2  
CE1  
CE0  
DEVICE  
V
V
V
V
V
V
V
Enabled  
Disabled  
Disabled  
Disabled  
Enabled  
Enabled  
Enabled  
Disabled  
IL  
IL  
IL  
IL  
IL  
V
IH  
V
V
V
IL  
IH  
IH  
IL  
V
IL  
IH  
V
V
V
V
V
V
V
IH  
IH  
IH  
IH  
IL  
IL  
IL  
V
IH  
V
V
V
IH  
IH  
IL  
V
IH  
Note: For single-chip applications, CE2 and CE1 can be connected to GND.  
December 2008  
319942-02  
Datasheet  
15