Nexperia
PXN012-60QL
N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33
aaa-033430
aaa-032718
150
2
1.6
1.2
0.8
0.4
0
R
a
2.8 V 3 V
3.5 V
DSon
(mΩ)
120
90
60
30
V
= 4.5 V
10 V
GS
0
0
10
20
30
40
50
60
I
70
(A)
80
-60 -30
0
30
60
90 120 150 180
T (°C)
j
D
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig. 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-032719
10
V
(V)
GS
V
DS
8
6
4
2
0
I
D
V
V
48 V
30 V
GS(pl)
GS(th)
V
DS
= 12 V
V
GS
Q
GS2
Q
GS1
Q
Q
GS
GD
0
3.33
6.67
10
13.33 16.67
(nC)
20
Q
G
Q
G(tot)
003aaa508
Tj = 25 °C; ID = 10 A
Fig. 12. Gate charge waveform definitions
Fig. 11. Gate-source voltage as a function of gate
charge; typical values
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PXN012-60QL
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Nexperia B.V. 2021. All rights reserved
Product data sheet
8 July 2021
7 / 12
NEXPERIA [ Nexperia ]
