Nexperia
PXN012-60QL
N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33
aaa-033426
3
10
I
D
(A)
Limit R
= V / I
DS D
DSon
2
10
t
p
= 10 µs
100 µs
10
DC
1 ms
1
10 ms
100 ms
-1
10
-1
2
10
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance from Fig. 4
junction to solder point
-
3
3.6
K/W
aaa-033427
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
-1
10
10
10
0.02
single shot
t
p
P
δ =
T
-2
t
t
p
T
-3
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
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PXN012-60QL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 July 2021
4 / 12
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