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PXN012-60QL 参数 Datasheet PDF下载

PXN012-60QL图片预览
型号: PXN012-60QL
PDF下载: 下载PDF文件 查看货源
内容描述: [N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33Production]
分类和应用:
文件页数/大小: 12 页 / 323 K
品牌: NEXPERIA [ Nexperia ]
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Nexperia  
PXN012-60QL  
N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
60  
-
70  
64  
1.9  
-
-
V
-
V
VGS(th)  
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 8  
1.5  
0.9  
-
2.5  
-
V
voltage  
ID = 1 mA; VDS=VGS; Tj = 150 °C  
V
ID = 1 mA; VDS=VGS; Tj = -55 °C  
-
2.9  
-
V
ΔVGS(th)/ΔT  
gate-source threshold 25 °C ≤ Tj ≤ 150 °C  
voltage variation with  
-
-4.7  
mV/K  
temperature  
IDSS  
drain leakage current  
gate leakage current  
VDS = 60 V; VGS = 0 V; Tj = 25 °C  
VDS = 60 V; VGS = 0 V; Tj = 150 °C  
VGS = 20 V; VDS = 0 V; Tj = 25 °C  
VGS = -20 V; VDS = 0 V; Tj = 25 °C  
VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 9  
-
-
-
-
-
-
0.01  
1
µA  
µA  
nA  
-
500  
100  
100  
11.5  
20  
IGSS  
2
2
nA  
RDSon  
drain-source on-state  
resistance  
9.8  
-
mΩ  
mΩ  
VGS = 10 V; ID = 10 A; Tj = 150 °C;  
Fig. 10  
VGS = 4.5 V; ID = 10 A; Tj = 25 °C; Fig. 9  
-
-
14  
-
17.6  
30  
mΩ  
mΩ  
VGS = 4.5 V; ID = 10 A; Tj = 150 °C;  
Fig. 10  
RG  
gate resistance  
f = 1 MHz; Tj = 25 °C  
-
1.66  
-
Ω
Dynamic characteristics  
QG(tot)  
total gate charge  
ID = 10 A; VDS = 30 V; VGS = 4.5 V;  
Tj = 25 °C; Fig. 11; Fig. 12  
-
-
-
9.64  
18.77  
9.54  
-
-
-
nC  
nC  
nC  
ID = 10 A; VDS = 30 V; VGS = 10 V;  
Tj = 25 °C; Fig. 11; Fig. 12  
ID = 0 A; VDS = 0 V; VGS = 4.5 V;  
Tj = 25 °C; Fig. 11; Fig. 12  
QGS  
gate-source charge  
ID = 10 A; VDS = 30 V; VGS = 4.5 V;  
Tj = 25 °C; Fig. 11; Fig. 12  
-
-
3
-
-
nC  
nC  
QGS(th)  
pre-threshold gate-  
source charge  
1.6  
QGS(th-pl)  
post-threshold gate-  
source charge  
-
1.4  
-
nC  
QGD  
gate-drain charge  
-
-
4.3  
3.1  
-
-
nC  
V
VGS(pl)  
gate-source plateau  
voltage  
ID = 10 A; VDS = 30 V; Tj = 25 °C;  
Fig. 11; Fig. 12  
Ciss  
Coss  
Crss  
input capacitance  
output capacitance  
VDS = 30 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; Fig. 13  
-
-
-
957  
386  
31  
-
-
-
pF  
pF  
pF  
reverse transfer  
capacitance  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 30 V; RL = 3 Ω; VGS = 4.5 V;  
RG(ext) = 5 Ω; Tj = 25 °C  
-
-
-
-
8.8  
-
-
-
-
ns  
ns  
ns  
ns  
18.5  
12.2  
10.9  
turn-off delay time  
fall time  
©
PXN012-60QL  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
8 July 2021  
5 / 12  
 
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