Nexperia
PXN012-60QL
N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
Qr
recovered charge
IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; [2]
VDS = 30 V; Tj = 25 °C; Fig. 15
-
13
-
nC
[1] Protected by 100% test
[2] includes capacitive recovery
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
S
S
S
G
D
D
D
D
1
2
3
4
2
D
S
3
4
G
5
drain
6
drain
mbb076
8
7
6
5
7
drain
MLPAK33 (SOT8002-1)
8
drain
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PXN012-60QL
MLPAK33
plastic thermal enhanced surface mounted package; mini SOT8002-1
leads; 8 terminals; pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
7AB
PXN012-60QL
©
PXN012-60QL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 July 2021
2 / 12
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