PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: PBSS9110X.
1.2 Features
SOT89 package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High efficiency leading to less heat generation
1.3 Applications
Major application segments:
Automotive 42 V power
Telecom infrastructure
Industrial
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
DC-to-DC converter
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
100
1
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current (DC)
-
-
-
-
-
-
A
ICM
peak collector current
single pulse;
3
A
tp ≤ 1 ms
[1]
RCEsat
collector-emitter
IC = 1 A;
-
165
200
mΩ
saturation resistance
IB = 100 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NEXPERIA [ Nexperia ]
