欢迎访问ic37.com |
会员登录 免费注册
发布采购

V58C2128804S 参数 Datasheet PDF下载

V58C2128804S图片预览
型号: V58C2128804S
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能2.5伏128兆位的DDR SDRAM [HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 922 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
 浏览型号V58C2128804S的Datasheet PDF文件第5页浏览型号V58C2128804S的Datasheet PDF文件第6页浏览型号V58C2128804S的Datasheet PDF文件第7页浏览型号V58C2128804S的Datasheet PDF文件第8页浏览型号V58C2128804S的Datasheet PDF文件第10页浏览型号V58C2128804S的Datasheet PDF文件第11页浏览型号V58C2128804S的Datasheet PDF文件第12页浏览型号V58C2128804S的Datasheet PDF文件第13页  
V58C2128(804/404/164)S  
Bank Activate Command  
The Bank Activate command is issued by holding CAS and WE high with CS and RAS low at the rising  
edge of the clock. The DDR SDRAM has four independent banks, so two Bank Select addresses (BA and  
0
BA ) are supported. The Bank Activate command must be applied before any Read or Write operation can  
1
be executed. The delay from the Bank Activate command to the first Read or Write command must meet or  
exceed the minimum RAS to CAS delay time (t  
min). Once a bank has been activated, it must be pre-  
RCD  
charged before another Bank Activate command can be applied to the same bank. The minimum time interval  
between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank to Bank delay  
time (t  
min).  
RRD  
Bank Activation Timing  
(CAS Latency = 2; Burst Length = Any)  
T0  
T1  
T2  
T3  
Tn  
tRC  
Tn+1  
Tn+2  
Tn+3  
Tn+4  
Tn+5  
tRP(min)  
tRRD(min)  
tRAS(min)  
tRCD(min)  
CK, CK  
BA/Address  
Bank/Row  
Activate/A  
Bank/Col  
Read/A  
Bank/Row  
Activate/A  
Bank/Row  
Bank  
Pre/A  
Activate/B  
Command  
Begin Precharge Bank A  
Read Operation  
With the DLL enabled, all devices operating at the same frequency within a system are ensured to have  
the same timing relationship between DQ and DQS relative to the CK input regardless of device density, pro-  
cess variation, or technology generation.  
The data strobe signal (DQS) is driven off chip simultaneously with the output data (DQ) during each read  
cycle. The same internal clock phase is used to drive both the output data and data strobe signal off chip to  
minimize skew between data strobe and output data. This internal clock phase is nominally aligned to the  
input differential clock (CK, CK) by the on-chip DLL. Therefore, when the DLL is enabled and the clock fre-  
quency is within the specified range for proper DLL operation, the data strobe (DQS), output data (DQ), and  
the system clock (CK) are all nominally aligned.  
Since the data strobe and output data are tightly coupled in the system, the data strobe signal may be de-  
layed and used to latch the output data into the receiving device. The tolerance for skew between DQS and  
DQ (tDQSQ) is tighter than that possible for CK to DQ (tAC) or DQS to CK (tDQSCK).  
V58C2128(804/404/164)S Rev. 1.6 March 2002  
9
 复制成功!